1 February 1991 Behaviour of a single quantum-well under deep level transient spectroscopy (DLTS) measurement: a new theoretical model
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24464
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We perform an analytical calculation of the capacitance of a single quantum well versus the applied bias using a " multi space charge regions approximation" . This model is able to reproduce the experimental behaviour of such a structure and is validated by a comparison with a complete numerical simulation. Secondly we describe using the thermionic emission theory the behaviour of carriers in the well when the structure is out of equilibrium. With these two models we obtain the capacitance transient using a very light computer calculation. This analysis shows that the capacitance transient is not exponential in contradiction with previous works. Using Deep Level Transient Spectroscopy we determine the band offset of a GaAs/GaInAs/GaAs single quantum well and compare the results with the one obtained using Capacitance-Voltage measurements associated with a complete numerical approach 778 / SPIE Vol. 1362 Physical Concepts of Materials for Novel Optoelectronic Device Applications Il: Device Physics andApplications (1990)
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xavier Letartre, Didier Stievenard, R. Barbier, "Behaviour of a single quantum-well under deep level transient spectroscopy (DLTS) measurement: a new theoretical model", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24464; https://doi.org/10.1117/12.24464
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