Bias dependence of the hole tunneling time in AlAs/GaAs resonant tunneling structures

Chris A. Van Hoof; Etienne Goovaerts; Gustaaf Borghs

doi:10.1117/12.24547

1 February 1991 Bias dependence of the hole tunneling time in AlAs/GaAs resonant tunneling structures

Chris A. Van Hoof, Etienne Goovaerts, Gustaaf Borghs

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24547
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Steady-state and time-resolved photoluminescence measurements of two double barrier GaAs/AlAs resonant tunneling structures with different barrier widths are presented as a function of bias voltage throughout the first resonance region. The confined exciton photoluminescence shows a risetime comparable in magnitude to its decay time, in the nanosecond region, and both are ascribed mainly to tunneling of the photocreated holes through the AlAs barriers. The luminescence originating from the n-GaAs contact layers, consists of two parts, a delayed and a fast component, which stem from recombination of holes which already have, and have not tunneled through the resonant tunneling structure, respectively. The general trend of decrease of the decay time with increasing bias is attributed to the increasing probability for hole tunneling through a single barrier with increasing electric field. Additional variations of the peak position, the linewidth and decay time of the confined exciton PL are directly correlated with the electron tunneling current.

Citation Download Citation

Chris A. Van Hoof, Etienne Goovaerts, and Gustaaf Borghs "Bias dependence of the hole tunneling time in AlAs/GaAs resonant tunneling structures", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24547

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