1 February 1991 Bonding and nonequilibrium crystallization of a-C:H/a-Se and a-C:H/KCl
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24452
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
IR analysis shown the ratio between different CH hybridization bonds sp1:sp2:sp3 1O:O. 09:O. 81 in a-C:H layer of a-C:H/a-Se and 0:0:1 of a-C:H/KC1. The ratio between the sp3-type configurations is sp3CH:sp3CH:sp3 CH3 0. 28:0. 38:0. 34 in a-C:H/a-Se and 0. 45:0. 33:0. 22 in a-C:H/KC1. A model of the non-equilibrium crystaflization of the layer in both films is proposed. Computer simulated figures are fractals with the dimension D1 1. 37 0. 02 in a-C:H/a-Se and D2 1. 81 in a-C:H/KC1. In good agreement with the experimental data D1 1. 35 0. 04 and D2 1. 77 0. 03.
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Da-Ren He, Xiuyan Ji, Ruo Bao Wang, Qihai Liu, Wangdi Wang, Maili Liu, Weizong Chen, Zhiyuan Liu, Wanxi Ji, Ren-ji Zhang, "Bonding and nonequilibrium crystallization of a-C:H/a-Se and a-C:H/KCl", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24452; https://doi.org/10.1117/12.24452
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