1 February 1991 Bonding and nonequilibrium crystallization of a-C:H/a-Se and a-C:H/KCl
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24452
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
IR analysis shown the ratio between different CH hybridization bonds sp1:sp2:sp3 1O:O. 09:O. 81 in a-C:H layer of a-C:H/a-Se and 0:0:1 of a-C:H/KC1. The ratio between the sp3-type configurations is sp3CH:sp3CH:sp3 CH3 0. 28:0. 38:0. 34 in a-C:H/a-Se and 0. 45:0. 33:0. 22 in a-C:H/KC1. A model of the non-equilibrium crystaflization of the layer in both films is proposed. Computer simulated figures are fractals with the dimension D1 1. 37 0. 02 in a-C:H/a-Se and D2 1. 81 in a-C:H/KC1. In good agreement with the experimental data D1 1. 35 0. 04 and D2 1. 77 0. 03.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Da-Ren He, Da-Ren He, Xiuyan Ji, Xiuyan Ji, Ruo Bao Wang, Ruo Bao Wang, Qihai Liu, Qihai Liu, Wangdi Wang, Wangdi Wang, Maili Liu, Maili Liu, Weizong Chen, Weizong Chen, Zhiyuan Liu, Zhiyuan Liu, Wanxi Ji, Wanxi Ji, Ren-ji Zhang, Ren-ji Zhang, } "Bonding and nonequilibrium crystallization of a-C:H/a-Se and a-C:H/KCl", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24452; https://doi.org/10.1117/12.24452
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