1 February 1991 Characterization of picosecond GaAs metal-semiconductor-metal photodetectors
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24539
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Interdigitated GaAs metalsemiconductormetal Schottky photodiodes have been studied experimentally and theoretically. The time evolution of the response current has been measured by means of photoconductive and electrooptic sampling with a time resolution of 0. 8 and 0. 3 ps respectively. The response current to a 70 fs laser pulse reaches maximum within 25 p5 then shows a fast decay of about 10 ps followed by a slower one. Selfconsistent twodimensional Monte Carlo particle simulation predicts that the former is due to electrons the latter to holes. With a sufficiently strong electric field the two species of carriers get separated. With increased light intensity a screened plasma forms that vanishes only through recombination which takes of the order of nanoseconds.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josef Rosenzweig, Josef Rosenzweig, C. Moglestue, C. Moglestue, A. Axmann, A. Axmann, Joachim Schneider, Joachim Schneider, Axel Huelsmann, Axel Huelsmann, M. Lambsdorff, M. Lambsdorff, Juergen Kuhl, Juergen Kuhl, Markus Klingenstein, Markus Klingenstein, H. Leier, H. Leier, Alfred W. B. Forchel, Alfred W. B. Forchel, } "Characterization of picosecond GaAs metal-semiconductor-metal photodetectors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24539; https://doi.org/10.1117/12.24539
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