1 February 1991 Cold to hot electron transition devices
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991); doi: 10.1117/12.48061
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
A MBE grown negative differential resistance transistor using n(+)-i-p(+)-i-n(+) structure are presented. The peak-to-valley current ratios (PVRs), peak current densities, and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with V(BE)
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chun-Yen Chang, "Cold to hot electron transition devices", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.48061; https://doi.org/10.1117/12.48061
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KEYWORDS
Transistors

Gallium arsenide

Optoelectronic devices

Electron transport

Heterojunctions

Modulation

Molecular beams

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