1 February 1991 Comparative analysis of external factors' influences on the GaP light-emitting p-n-junctions
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24574
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Radiationinduced modification of characteristics and parameters of the GaP junctions emitting in reds green and yellowgreen spectral regiosi are st udied. A dissociation of the ZnO complexes in redemitting juntons under neutron radiation was shown for the first time. Deep level spectrum Df the gree1i and yellowgreenemitting junctions was investigated. Ionization ene rgies and capture crosssection of six donors and two acceptors centers were determine.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor V. Rizikov, Igor V. Rizikov, George S. Svechnikov, George S. Svechnikov, Sergey V. Bulyarsky, Sergey V. Bulyarsky, Alexander S. Ambrozevich, Alexander S. Ambrozevich, } "Comparative analysis of external factors' influences on the GaP light-emitting p-n-junctions", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24574; https://doi.org/10.1117/12.24574
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