Current technologies for very high performance VLSI ICs

Ernesto H. Perea

doi:10.1117/12.24517

1 February 1991 Current technologies for very high performance VLSI ICs

Ernesto H. Perea

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24517
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A review is given of III-V device performances with specific references to their use in high-speed signal processing and communications. Application-specific integrated circuits (ICs) are compared to emitter coupled logic (ECL) gate arrays in terms of density and speed, and specific attention is given to semicustom GaAs ICs. Performance and cost comparisons are presented in the form of critical path analyses and device sizes. The data-conversion applications for the III-V devices are set forth indicating that self-aligned GaAs MESFET technologies can be used for high-resolution flash ADCs because of their very low short-distance dispersions. GaAs is shown to be a viable alternative for silicon ECL and to be more useful in the fabrication of larger wafers of four inches. GaAs devices are more effective than silicon ECL if they can provide a gain of not less than a factor of five in the power-delay product.

Citation Download Citation

Ernesto H. Perea "Current technologies for very high performance VLSI ICs", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24517

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