1 February 1991 Current transport in charge injection devices
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24462
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Based on Shockley diffusion theroy we proposed an injection current model for the metaloxide- semiconductor (MOS) charge injectioii device (CID) under charge sharing mode readout scheme. It is found that the injection current is proportional to the inverion charge concentration afl(l the exl)onential of surface potential divided by thermal voltage i. e. the relation follows the famous ideal (liode equatioii. In Or(ler to verify the model we develop a photocurrent method to measure the injection curreiit versus surface potential characteristics of a silicon MOS capacitor. Jl experimental results are in good agreement with the ideal diode equation afl(1 the ideality factor is very close to unity. Based on this model we also derive the equivalent SPICE circuit for the single-gate CID.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chao-Wen Wu, Hao-Hsiung Lin, "Current transport in charge injection devices", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24462; https://doi.org/10.1117/12.24462
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