1 February 1991 Current-voltage characteristics of resonant tunneling diodes
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24460
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Current-voltage characteristics of a resonant tunneling diode are studied by including the effects of the conservation of transverse momentum at the heterojunction interfaces, energy-band nonparabolicity, and the temperature dependence of effective mass. The results are significantly different from the previous calculations, in which these effects are neglected. The present calculations can also explain the experimental results: (1) peak current density is the same at 77 K and at 300 K, and (2) the voltage position of the peak for 77 K is lower than that for 300 K. Also, the discrepancy between the experimental and the theoretical values of the voltage at which the peak occurs is reduced.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susanta Sen, B. R. Nag, S. Midday, "Current-voltage characteristics of resonant tunneling diodes", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24460; https://doi.org/10.1117/12.24460
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