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1 February 1991 Design optimization of three-stage GaAs monolithic optical amplifier using SPICE
M. S. Yadav; D. C. Dumka; Ramesh C. Ramola; Subodh Johri; Harshad S. Kothari; Babu Ram Singh
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24470
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The effects of layout parameters on the gain response speed noise behaviour and sensitivity of a hybrid optical receiver consisting of a three stage GaAs monolithic transimpedance amplifier and a detector using SPICE has been analysed. The BFL type configuration consisting of an inverter and buffer/level shift circuit was chosen for the amplifier design. The simulated results predict the optimised layout parameters for the targeted gain of 100 with 300 Mbit/Sec data rate and 40 dBm sensitivity for CEERI''s 1/um gate length GaAs MESFET technology.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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M. S. Yadav, D. C. Dumka, Ramesh C. Ramola, Subodh Johri, Harshad S. Kothari, and Babu Ram Singh "Design optimization of three-stage GaAs monolithic optical amplifier using SPICE", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24470
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