1 February 1991 Design optimization of three-stage GaAs monolithic optical amplifier using SPICE
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24470
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The effects of layout parameters on the gain response speed noise behaviour and sensitivity of a hybrid optical receiver consisting of a three stage GaAs monolithic transimpedance amplifier and a detector using SPICE has been analysed. The BFL type configuration consisting of an inverter and buffer/level shift circuit was chosen for the amplifier design. The simulated results predict the optimised layout parameters for the targeted gain of 100 with 300 Mbit/Sec data rate and 40 dBm sensitivity for CEERI''s 1/um gate length GaAs MESFET technology.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. S. Yadav, M. S. Yadav, D. C. Dumka, D. C. Dumka, Ramesh C. Ramola, Ramesh C. Ramola, Subodh Johri, Subodh Johri, Harshad S. Kothari, Harshad S. Kothari, Babu Ram Singh, Babu Ram Singh, "Design optimization of three-stage GaAs monolithic optical amplifier using SPICE", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24470; https://doi.org/10.1117/12.24470
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