1 February 1991 Energy and momentum relaxation of electrons in GaAs quantum-wells: effect of nondrifting hot phonons and interface roughness
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24466
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Experimental results on high-field parallel transport in GaAs/GaAlAs quantum well structures are presented. The results are compared with a theoretical model of high field transport involving non-drifting hot phonons and scattering from remote impurities and interface roughness. The latter two effects contribute to the relaxation of the electron momentum. It is also shown that non-drifting hot phonons with a fmite life-time reduce the energy relaxation and enhance the momentum relaxation. The enhancement of the momentum relaxation at high fields inhibits negative differential conductivity via real space transfer or intervalley transfer. This is observed in our samples. The reduction of the drift velocity at high fields is also detrimental to the speed of many devices which operate in the hot electron regime.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rita Gupta, Rita Gupta, Naci Balkan, Naci Balkan, Brian K. Ridley, Brian K. Ridley, M. T. Emeny, M. T. Emeny, } "Energy and momentum relaxation of electrons in GaAs quantum-wells: effect of nondrifting hot phonons and interface roughness", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24466; https://doi.org/10.1117/12.24466
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top