1 February 1991 External factors' influences on AIIIBV light-emitting structures
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24575
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
A comparative analysis of the effects of temperature, and electron (4.5 MeV), neutron (0.1 MeV), and gamma (1.25 MeV) irradiation on GaAs(1-x)P(x) (x
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George S. Svechnikov, George S. Svechnikov, Igor V. Rizikov, Igor V. Rizikov, } "External factors' influences on AIIIBV light-emitting structures", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24575; https://doi.org/10.1117/12.24575
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