1 February 1991 Far-IR magneto-emission study of the quantum-hall state and breakdown of the quantum-hall effect
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24546
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
FIR and transport measurements are undertaken on quasi-2D electron gas (2DEG) in the Quantum Hall Effect (QHE) regime of GaAs heterojunctions by means of cyclotron emission. The heating electric field is varied during the measurements which are conducted as Landau emission experiments in quantizing magnetic fields. Attention is given to the evolution of the emission spectra and the breakdown of the QHE when the electric field increases. Supplementary lines are identified in the FIR spectra that coincide with the minima of the Hall plateaus under low electric-field conditions. The nonhomogeneous distribution of the potential in the Quantum Hall state is examined to explain the supplementary lines. The nonequilibrium carrier distribution under high electric-field conditions leads to narrower Hall plateaus due to the breakdown of the equation Ns
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Andre Raymond, Andre Raymond, C. Chaubet, C. Chaubet, Manijeh Razeghi, Manijeh Razeghi, } "Far-IR magneto-emission study of the quantum-hall state and breakdown of the quantum-hall effect", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24546; https://doi.org/10.1117/12.24546
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