1 February 1991 Generalization of Bragg reflector geometry: application to (Ga,Al)As - (Ca,Sr)F2 reflectors
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24533
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Bragg reflectors of three geometrical configurations are considered analytically and experimentally to solve the problem of cracking which develops due to thermal stress between the two materials used. The Bragg reflectors are based on (Ca,Sr)F2 and (Ga,Al)As and are grown by means of molecular beam epitaxy. Three geometrical solutions are considered: (1) three material combinations within quarter-wave structures; (2) mixed reflectors of GaAs-(Ca,Sr)F2 and GaAs-AlAs in shifted Bragg reflectors with reduced layer thicknesses; or (3) generalized Bragg structures based on asymmetrical geometries. The absolute or relative fluoride thicknesses in the structures can be reduced by means of the proposed configurations. Effective heteroepitaxial reflectors are set forth that have crack-free surface morphologies because the structures of the generalized Bragg reflectors reduce the stress inherent in the devices.
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Chantal Fontaine, Chantal Fontaine, Philippe Requena, Philippe Requena, Antonio Munoz-Yague, Antonio Munoz-Yague, } "Generalization of Bragg reflector geometry: application to (Ga,Al)As - (Ca,Sr)F2 reflectors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24533; https://doi.org/10.1117/12.24533
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