Generalized transport model for heterojunction: a computer modeling approach

Giovanni Bellomi; Stefano Bottacchi

doi:10.1117/12.24461

1 February 1991 Generalized transport model for heterojunction: a computer modeling approach

Giovanni Bellomi, Stefano Bottacchi

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24461
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

To overcome the discrepancy existing between the well known therinionic emission and drift-diffusion models particularly critical in arbitrary graded isotype heterojunctions a unified transport model has been considered. The algorithm is based on a simultaneous numerical solution of the one dimensional Poisson and Boltzmann equations using an iterative method to obtain the self-consistent potential and distribution functions for every polarization condition. I .

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Giovanni Bellomi and Stefano Bottacchi "Generalized transport model for heterojunction: a computer modeling approach", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24461

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