1 February 1991 Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24457
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
MOCVD and PE-MOCVD are versatile growth techniques which are capable of producing high quality YBCO superconducting films. The use of these methods to grow YBCO films with Tc in the range 88-90 K and Jc(77 K) repeatably in excess of 10 exp 6 A/sq cm is reported. This can be accomplished at substrate temperatures as low as 730 C, in the case of MOCVD, and 670 C for PE-MOCVD, through the use of N2O as the oxidant source gas. Growth at temperatures down to 570 C has been demonstrated but as the cost of Tc decreasing to 72 K. Still, these results are very promising for development of a low temperature process for the growth of YBCO which will be compatible with active device technologies.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing-Fu Zhao, Y. Q. Li, Chyi Shyuan Chern, Wei-Feng Huang, Peter E. Norris, B. M. Gallois, B. H. Kear, P. Lu, G. A. Kulesha, F. Cosandey, "Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24457; https://doi.org/10.1117/12.24457
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