1 February 1991 Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24457
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
MOCVD and PE-MOCVD are versatile growth techniques which are capable of producing high quality YBCO superconducting films. The use of these methods to grow YBCO films with Tc in the range 88-90 K and Jc(77 K) repeatably in excess of 10 exp 6 A/sq cm is reported. This can be accomplished at substrate temperatures as low as 730 C, in the case of MOCVD, and 670 C for PE-MOCVD, through the use of N2O as the oxidant source gas. Growth at temperatures down to 570 C has been demonstrated but as the cost of Tc decreasing to 72 K. Still, these results are very promising for development of a low temperature process for the growth of YBCO which will be compatible with active device technologies.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing-Fu Zhao, Jing-Fu Zhao, Y. Q. Li, Y. Q. Li, Chyi Shyuan Chern, Chyi Shyuan Chern, Wei-Feng Huang, Wei-Feng Huang, Peter E. Norris, Peter E. Norris, B. M. Gallois, B. M. Gallois, B. H. Kear, B. H. Kear, P. Lu, P. Lu, G. A. Kulesha, G. A. Kulesha, F. Cosandey, F. Cosandey, } "Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24457; https://doi.org/10.1117/12.24457
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