1 February 1991 High-efficiency vertical-cavity lasers and modulators
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24443
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Within the past year significant advances in the development of high-performance vertical-cavity surface-emitting laser (VCSELs) and quantum-well modulators has been achieved. Large arrays of VCSELs with submilliamp thresholds and diffraction limited beams have been produced by MBE growth of InGaAs/GaAs strained-layer quantum-well active regions encompassed by integral AlAs/GaAs quarter-wave stack mirrors. Also, using similar technology, asymmetric transverse Fabry-Perot modulators with transfer efficiencies about 20 percent/V and high-extinction on/off modulation with voltage swing of only 2 volts have been demonstrated. Using superlattice active regions, room-temperature blue shifted absorption modulators have been produced, and self-electrooptic effect devices with record on/off ratios (more than 100:1) have been achieved.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry A. Coldren, Scott W. Corzine, Randall S. Geels, Arthur C. Gossard, K. K. Law, James L. Merz, Jeff W. Scott, Robert J. Simes, Ran Hong Yan, "High-efficiency vertical-cavity lasers and modulators", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24443; https://doi.org/10.1117/12.24443
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