1 February 1991 Hot carrier relaxation in bulk InGaAs and quantum-wells
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24545
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We have used the luminescence upconversion technique to perform time-resolved measurements on both bulk InGaAs lattice-matched to InP and InGaAsflnAlAs multiple quantum wells (MQW) at a resolution of . ''7OOfs. For the bulk we present carrier temperatures for O extracted in the usual way from the high energy tail of transient spectra and relate this to more complete lineshape and cooling curve analyses. For the MQW we have found luminescence associated with the n subbands to be persistent to times in excess of 500ps and attribute this to real space transfer effects. In addition we compare rise and decay time data over the spectral emission ranges for the bulk and MQW.
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Andrew Gregory, Andrew Gregory, Richard T. Phillips, Richard T. Phillips, Fariduddin A. Majumder, Fariduddin A. Majumder, } "Hot carrier relaxation in bulk InGaAs and quantum-wells", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24545; https://doi.org/10.1117/12.24545
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