1 February 1991 Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24568
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The influence of the doping level of the InP p type cladding layer on the differentialexternal efficiency 1Dand on the threshold current density th of 1 . 5 jtm InGaAs-InGaAsP-InP quantum well (QW) lasers has been investigated experimentally and theoretically. The experimental results agree at with our model which takes into account the recombinations and the light absorption in all the layers. This allows to predict the optimum values for the optical cavity thickness and for the number of wells to lower the threshold current.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard Sermage, Bernard Sermage, M. Blez, M. Blez, Christophe Kazmierski, Christophe Kazmierski, Abdallah Ougazzaden, Abdallah Ougazzaden, Andrei Mircea, Andrei Mircea, Jean-Claude Bouley, Jean-Claude Bouley, } "Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24568; https://doi.org/10.1117/12.24568
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