1 February 1991 Long-wavelength GaAs quantum-well infrared photodetectors
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24489
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
GaAs quantum-well IR photodetectors (QWIPs) that operate at a range of peak absorption wavelengths are considered in terms of their characteristics and potential applications. The structures of some QWIPs are described with references to their band diagrams, absorption coefficients, low-temperature quantum efficiencies, and peak detectivities. Peak detectivity is shown to be temperature- and bias-dependent and to be linked to doping density, and the QWIP technology in general has high peak detectivities and good uniformity for the production of large-area 2D arrays.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Barry F. Levine, Barry F. Levine, } "Long-wavelength GaAs quantum-well infrared photodetectors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24489; https://doi.org/10.1117/12.24489
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