Modulation doping and delta doping of III-V compound semiconductors

Peter Hendriks; E. A. E. Zwaal; Jos E. M. Haverkort; Joachim H. Wolter

doi:10.1117/12.24504

1 February 1991 Modulation doping and delta doping of III-V compound semiconductors

Peter Hendriks, E. A. E. Zwaal, Jos E. M. Haverkort, Joachim H. Wolter

Author Affiliations +

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24504
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and switching effects. The concept of electric-field-induced parallel conduction is set forth and shown to explain the current instabilities and current collapse at high electric fields. Delta doping is shown to be effective for electrooptic devices such as modulators. MQW modulators with delta-doped contacts can be used as waveguides in complicated coupler networks, or they can be optimized for a high on/off ratio by increasing device length without increasing propagation loss.

Citation Download Citation

Peter Hendriks, E. A. E. Zwaal, Jos E. M. Haverkort, and Joachim H. Wolter "Modulation doping and delta doping of III-V compound semiconductors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24504

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