1 February 1991 New materials for high-performance III-V ICs and OEICs: an industrial approach
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24446
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
High performance IC''s and OEIC''s rely on complex epitaxial heterostructures with tight bandgap engineering. Related developmentandproduction requires notonly very homogeneous materials but manufacturing ofqualified batches of similar wafers. Furthermore in most cases critical feature size of devices is submicronic which puts forward another important requirementconcerning surface contamination ofwafers. Thispaperpresents the breakthrough we have achieved in the above fields using especially the novel MOVPE multiwafer PLANET reactor.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerard Maric Martin, Peter M. Frijlink, "New materials for high-performance III-V ICs and OEICs: an industrial approach", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24446; https://doi.org/10.1117/12.24446
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