Novel doping superlattice-based PbTe-IR detector device

Josef Oswald; Manfred Pippan; Beate Tranta; Guenther E. Bauer

doi:10.1117/12.24563

1 February 1991 Novel doping superlattice-based PbTe-IR detector device

Josef Oswald, Manfred Pippan, Beate Tranta, Guenther E. Bauer

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24563
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The concept of selectively contacted PbTe p-n-p or p-i-n-i-p structures offers interesting new features for IR-detection. As shown by a simple model and demonstrated by photo Hall and time resolved photoconductivity measurements, an enhancement of the photoconductive response beyond the expected effect of the optically generated carriers results. Control of the response time is available by background illumination. The photo Hall effect itself represents another new detection principle.

Citation Download Citation

Josef Oswald, Manfred Pippan, Beate Tranta, and Guenther E. Bauer "Novel doping superlattice-based PbTe-IR detector device", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24563

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available