1 February 1991 Novel doping superlattice-based PbTe-IR detector device
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24563
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The concept of selectively contacted PbTe p-n-p or p-i-n-i-p structures offers interesting new features for IR-detection. As shown by a simple model and demonstrated by photo Hall and time resolved photoconductivity measurements, an enhancement of the photoconductive response beyond the expected effect of the optically generated carriers results. Control of the response time is available by background illumination. The photo Hall effect itself represents another new detection principle.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josef Oswald, Josef Oswald, Manfred Pippan, Manfred Pippan, Beate Tranta, Beate Tranta, Guenther E. Bauer, Guenther E. Bauer, } "Novel doping superlattice-based PbTe-IR detector device", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24563; https://doi.org/10.1117/12.24563
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