1 February 1991 Optical fiber amplifiers
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991); doi: 10.1117/12.24511
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Recent progress on an erbium-doped optical fiber amplifier (EDFA) pumped with a 0.98 micron laser diode is reported. An erbium-doped fiber with a very high gain coefficient of 11.0 dB/mW has been achieved using an extended VAD method. A high power 0.98 micron laser diode with a strained-layer InGaAs quantum well laser structure has been developed as the pumping light source. By employing these key components in the EDFA, a compact and highly efficient EDFA module has been fabricated successfully. The module size is only 36 cc. It attained a 33 dB net gain at 1.536 microns and it consumed only 175 mW of electricity.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsuhiko Ikegami, Motohiro Nakahara, "Optical fiber amplifiers", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24511; https://doi.org/10.1117/12.24511
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KEYWORDS
Optical amplifiers

Glasses

Semiconductor lasers

Optical fibers

Erbium

Fiber amplifiers

Optoelectronic devices

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