1 February 1991 Optical nonlinearities due to long-lived electron-hole plasmas
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991); doi: 10.1117/12.24555
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
By choice of appropriate layer thicknesses it is possible to produce GaAs/AlAs quantum well structures in which the lowest energy electron and hole wavefunctions are localised in spatially separate layers. As the low temperature radiative lifetime ol such a structure is long (ps) it is possible to observe cw optical nonlinearities at relatively low power densities. In this paper results of optical pump/probe experiments will be presented from a range of standard type II structures along with results from a new type of structure that enhances the spatial separation of the electron/hole population.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philip Dawson, Ian Galbraith, Alicia I. Kucharska, C. Thomas Foxon, "Optical nonlinearities due to long-lived electron-hole plasmas", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24555; https://doi.org/10.1117/12.24555
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KEYWORDS
Quantum wells

Gallium arsenide

Absorption

Excitons

Optoelectronic devices

Plasmas

Luminescence

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