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1 February 1991 Optically coupled 3-D common memory with GaAs on Si structure
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24509
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
An ultra fast data transfer speed is demonstrated for a novel three-dimensional (3D) Static Random Access Memory (SRAM) consisting of multilayer silicon LSI chips on which GaAs LEDs and photodetectors are monolithically integrated for vertical optical interconnections. A unique feature of this system is the capability of parallel data transfer from one memory layer to the upper and lower memory layers by the optical interconnections. The results of static and dynamic simulations of the optically coupled 3D common memory have indicated that a block of 512 bits data can be transferred through four memory layers within 16 nsec. This is an equivalent data transfer speed of 128 Gbits/sec/layer.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masataka Hirose, Harumi Takata, and Mitsumasa Koyanagi "Optically coupled 3-D common memory with GaAs on Si structure", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24509
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