1 February 1991 Optoelectronic and optical bistabilities of photocurrent and photoluminescence at low-temperature avalanche breakdown in GaAs epitaxial films
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991); doi: 10.1117/12.24534
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Epitaxial films of n-GaAs are studied at helium temperature by means of low-temperature impurity breakdown to study optical and optoelectronic bistabilities. During switching the carrier concentration is found to increase by about one order of magnitude, and the donors become ionized while achieving increased carrier mobility. The bistabilities are shown to be of interest for the design of switching elements that could include memory elements for information processing.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg A. Ryabushkin, Nikolay S. Platonov, Vladimir A. Sablikov, V. I. Sergeyev, Vladimir Antonovich Bader, "Optoelectronic and optical bistabilities of photocurrent and photoluminescence at low-temperature avalanche breakdown in GaAs epitaxial films", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24534; https://doi.org/10.1117/12.24534
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KEYWORDS
Switching

Bistability

Electrons

Optoelectronics

Gallium arsenide

Optoelectronic devices

Luminescence

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