1 February 1991 Performances of gallium arsenide on silicon substrate photoconductive detectors
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24538
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Planar photoconductors made with GaAs on silicon substrate have been studied with respect to static and dynamic responsivities as well as noise levels in the 1 Hz - 100 kHz frequency range. The results obtained have led to the determination of the specific detectivity which in turn is compared to those of GaAs planar photoconductors and Si photodiodes.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Monique T. Constant, Monique T. Constant, Luc Boussekey, Luc Boussekey, Didier J. Decoster, Didier J. Decoster, Jean-Pierre Vilcot, Jean-Pierre Vilcot, } "Performances of gallium arsenide on silicon substrate photoconductive detectors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24538; https://doi.org/10.1117/12.24538
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