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1 February 1991 Picosecond optoelectronic semiconductor switching and its application
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24562
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Using psYAG laser controlled optoelectronic switching technique semiconductor carrier recombination times and mobilities at different conditions (different preparation carriers in different valleys) were measured Measurements of the response of a fast photodiode (about 100 ps) of a 6 6Hz transistor (50 ps) and the dispersion of a ps electrical pulse along a cable (broadening from 25 ps to about 1 ns) are reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Volkmar Brueckner, Harald Bergner, Matthias Lenzner, and Reiner Strobel "Picosecond optoelectronic semiconductor switching and its application", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24562
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