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1 February 1991 Quasi-three-dimensional electron systems and superlattices in wide parabolic wells: fabrication and physics
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24505
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We report the fabrication characterization and physics of selectively-doped wide parabolic A1GaAs wells which contain low-disorder nearly uniform-density dilute electron systems. The electron layer in these structures has a thickness of ''''lOOOA and an effective three-dimensional density of 1x1016cm3. These structures provide a rather unique system for the studies of the single-electron as well as many-body effects in space-charge layers in semiconductors. Examples of new physical phenomena observed in these systems are presented these include: (a) the observation of plasma-shifted cyclotron resonance and (b) the collapse of the fractional quantum Hall effect in systems with large electron layer thickness. We also present the fabrication and magnetotransport measurements in a novel selectively-doped superlattice produced in a wide parabolic quantum well with a superimposed periodic potential.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mansour Shayegan "Quasi-three-dimensional electron systems and superlattices in wide parabolic wells: fabrication and physics", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24505
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