1 February 1991 Recent progress in device-oriented II-VI research at the University of Wuerzburg
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24507
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Interest in CdTe field effect transistors and multi-gated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on-board signal processing based on CdTe devices. Although CdTe metal-semiconductor field effect transistors have only recently been fabricated rapid improvement in device performance has been achieved. All the devices reported have been fabricated from CdTe:In epilayers grown by Photoassisted Molecular Beam Epitaxy. We report on devices having gold Schottky barrier with reverse breakdown voltages as high as 28. 0 V and ideality factors near 1. 7. These MESFETs exhibit good depleting mode action.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gottfried Landwehr, Gottfried Landwehr, Andreas Waag, Andreas Waag, K. Hofmann, K. Hofmann, Norbert Kallis, Norbert Kallis, Robert N. Bicknell-Tassius, Robert N. Bicknell-Tassius, } "Recent progress in device-oriented II-VI research at the University of Wuerzburg", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24507; https://doi.org/10.1117/12.24507
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