1 February 1991 Refractive index of multiple-quantum-well waveguides subject to impurity induced disordering using boron and fluorine
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24552
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Studies have been made of the effect of boron and fluorine impurity induced disordering on the refractive index of AlxGaixAs multiple quantum well waveguides. A grating coupler formed in low-index material was used to determine experimentally the changes in refractive index obtained in partially disordered material. Over the measured wavelength range 820-920 nm substantial changes 1 in the refractive index were observed. Fluorine was found to produce larger changes than boron for similar annealing conditions.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stein I. Hansen, John H. Marsh, John Stuart Roberts, C. Jeynes, "Refractive index of multiple-quantum-well waveguides subject to impurity induced disordering using boron and fluorine", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24552; https://doi.org/10.1117/12.24552
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