1 February 1991 Relaxation-rate of phonon momentum in semiconductors
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24465
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
In transport the creation of hot LU phonons causes a reduction in the carrier energy relaxation rate but an enhancement of the momentum relaxation rate. The magnitude of the latter determines the drift velocity attainable at high electric fields - which in turn limits the speed of devices such as FETs. How big this effect is depends on the rate of relaxation of phonon drift. Mechanisms for this relaxation are discussed and phonon-momentum relaxation rates are calculated for bulk and layered structures. Processes considered include the FrOhlich interaction with charged impurities phonon-phonon scattering and scattering at interface irregularities. We conclude that the quality of the material structure is crucial.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rita Gupta, Brian K. Ridley, "Relaxation-rate of phonon momentum in semiconductors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24465; https://doi.org/10.1117/12.24465
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