1 February 1991 Shallow-deep bistability behavior of the DX-centers in n-AlxGa1-xAs and the EL2-defects in n-GaAs
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24495
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Magnetic freezeout experiments under hydrostatic pressure have been per formed in the dark before and after successive illuminations on barely metal lic nA1GaAs (x 32) and n-GaAs samples. In both cases evidence is given for a shallowdeep bistability behavior of deep defect states near the metal insulator transition. In nAl Ga As the lightinduced transformation of the x 1x deep DXtrap into its metastable effectivemasslike configuration is demons trated allowing to monitor the shallow donors concentrations in a wide range across the Mott density. In nGaAs evidence is given for pressureinduced elec trical activity of the EL2 defect metastable configuration which is found to act as an acceptorlike resonant level whose occupation affects strongly ''the concentration of the shallow donor states in almost a similar way as in the ca se of the DXstates in nAl Ga As. x 1-x
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abderrahmane Kadri, Jean-Claude Portal, "Shallow-deep bistability behavior of the DX-centers in n-AlxGa1-xAs and the EL2-defects in n-GaAs", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24495; https://doi.org/10.1117/12.24495
PROCEEDINGS
8 PAGES


SHARE
Back to Top