1 February 1991 Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24531
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Broad-area stripe geometry lasers are developed with DH InAs(0.95)Sb(0.05)/InAs(0.50)Sb(0.19)P(0.31) structures, and the emission characteristics are investigated. The lasers are grown by LPE on 100 plane InAs and emit at up to 110 K and at near 3.2 microns at 77 K with evidence of some longitudinal modes. The threshold current density at 3.2 microns is approximately 1.5 kA/sq cm corresponding to a characteristic temperature of 38 K and a quantum differential external efficiency of 4-5 percent per face above threshold. The Auger effect is predominant at temperatures of about 300 K corresponding to a threshold current density of about 30 kA/sq cm, whereas the threshold current density at low temperatures is governed by nonradiative recombination on deep centers. An internal quantum efficiency evaluation demonstrates that the maximum temperature for laser operation is 240 K.
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Habib Mani, Habib Mani, Andre Francis Joullie, Andre Francis Joullie, } "Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24531; https://doi.org/10.1117/12.24531
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