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1 February 1991 Structure optimization of selectively doped heterojunctions: evidences for a magnetically induced Wigner solidification
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24506
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We discuss the current state of knowledge concerning the three following questions : i) what is the physical system most appropriate for the observation of the Wigner transition in an electron plasma ? ii) how such a system can be optimized in order to limit competing effects like single-particle localization ? iii) which experimental techniques allow unambiguous observation of this transition ? We present the results concerning our study of dense quantum two-dimensional electron systems in low disordered selectively doped GaAs/GaAIAs heterojunctions and our evidences for a magnetically induced Wigner transition obtained concomitantly by resonant absorption of radio-frequency waves and by voltage-source transport measurements at low temperature and high magnetic field.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernard Etienne, E. Paris, C. Dorin, Veronique Thierry-Mieg, F. I. B. Williams, D. C. Glattly, G. Deville, E. Y. Andrei, and Oliver Probst "Structure optimization of selectively doped heterojunctions: evidences for a magnetically induced Wigner solidification", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24506
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