Study of novel oscillations in degenerate GaAs/A1GaAs quantum-wells using electro-optic voltage probing

Ernest S.-M. Tsui; Anthony J. Vickers

doi:10.1117/12.24467

1 February 1991 Study of novel oscillations in degenerate GaAs/A1GaAs quantum-wells using electro-optic voltage probing

Ernest S.-M. Tsui, Anthony J. Vickers

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24467
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We used electro-optic voltage probing to map the potential distributions along a degenerate single quantum well that exhibited current oscillations when subjected to high fields at low temperatures. The results given here were obtained over a wide range of field strengths at room temperature. The potential profiles were found to contain some very unusual features which might be indicative of the poor quality of the barrier material in this sample.

Citation Download Citation

Ernest S.-M. Tsui and Anthony J. Vickers "Study of novel oscillations in degenerate GaAs/A1GaAs quantum-wells using electro-optic voltage probing", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24467

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