Translator Disclaimer
1 February 1991 Study of novel oscillations in degenerate GaAs/A1GaAs quantum-wells using electro-optic voltage probing
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24467
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We used electro-optic voltage probing to map the potential distributions along a degenerate single quantum well that exhibited current oscillations when subjected to high fields at low temperatures. The results given here were obtained over a wide range of field strengths at room temperature. The potential profiles were found to contain some very unusual features which might be indicative of the poor quality of the barrier material in this sample.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernest S.-M. Tsui and Anthony J. Vickers "Study of novel oscillations in degenerate GaAs/A1GaAs quantum-wells using electro-optic voltage probing", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24467
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top