1 February 1991 Surface plasmon enhanced light emission in GaAs/AlGaAs light emitting diodes
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24442
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
It is shown for the first time that strongly directional emission of defined polarization can be achieved from conventional AlGaAs/GaAs double heterostructure surface emitting light emitting diodes (LEDs) via coupling to surface plasmons. By microstructuring the surface, LEDs were fabricated with a beam divergence of less than 4 deg and an increased quantum efficiency. It is demonstrated that the surface plasmon excitation and emission mechanism has the potential to improve the performance of LEDs. In addition, it is shown that this principle can be applied to laser diodes. A controlled outcoming of laser light by a surface plasmon coupling is demonstrated.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erich Gornik, Anton Koeck, C. Thanner, Lutz Korte, "Surface plasmon enhanced light emission in GaAs/AlGaAs light emitting diodes", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24442; https://doi.org/10.1117/12.24442
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