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1 February 1991 Temperature instability in silicon-based microheating device
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24573
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The floating silicon thin-film bridge used as a micro-heating infrared source has been analyzed and simulated for its Joule-thermal effect. It has been found that there exists an effect of temperature instability, when the current passing through the bridge is reaching a critical value. This phenomenon is attributed to the opposite behaviors of the heat conduction and the electrical resistance with respect to the temperature, and their mutual constraints in the heat flow equation. The critical heating process is also associated with a nonlinear time-delay behavior. The delay effect is reduced if the current is over the critical value. The unstable temperature is upper limited by the starting of the silicon intrinsic behavior and decreased with low impurity doping. In practical operations, the controllability of the device thus becomes difficult above this critical temperature.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Shown Shie and Jiunn-Long Lian "Temperature instability in silicon-based microheating device", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24573
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