Use of admittance spectroscopy to probe the DX-centers in AlGaAs

S. Subramanian; S. Chakravarty; S. Anand; B. M. Arora

doi:10.1117/12.24543

1 February 1991 Use of admittance spectroscopy to probe the DX-centers in AlGaAs

S. Subramanian, S. Chakravarty, S. Anand, B. M. Arora

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24543
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We have used admittance spectroscopy to characterize the DX centers in Sn doped A1GaAs and Si doped A1GaAs samples. Three peaks in conductance and the corresponding steps in capacitance are observed in the admittance spectra of Sn doped samples. It is shown that these peaks arise from the multiple states of the same physical center rather than to three different types of defects. The deepest state corresponds to the conventional DX state in the Sn doped AlGaAs probed by deep level transient spectroscopy (DLTS). The other two states are not normally observed in DLTS experiments due to experimental limitations. In the case of Si doped A1GaAs samples only one peak which is broad or slightly asymmetric is observed and it corresponds to the main DLTS peak of the Si-DX center.

Citation Download Citation

S. Subramanian, S. Chakravarty, S. Anand, and B. M. Arora "Use of admittance spectroscopy to probe the DX-centers in AlGaAs", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24543

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