GaInAs PIN photodetectors on semi-insulating substrates

Deborah L. Crawford; Y. G. Wey; John Edward Bowers; Michael J. Hafich; Gary Y. Robinson

doi:10.1117/12.24896

1 February 1991 GaInAs PIN photodetectors on semi-insulating substrates

Deborah L. Crawford, Y. G. Wey, John Edward Bowers, Michael J. Hafich, Gary Y. Robinson

Proceedings Volume 1371, High-Frequency Analog Fiber Optic Systems; (1991) https://doi.org/10.1117/12.24896
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States

Abstract

An InGaAs/InP PIN photodiode integrated with 50 ohms coplanar waveguides has been fabricated on a semi-insulating substrate for high-speed operation. This photodetector exhibits a system limited impulse response of 16 ps, which is considered to be the fastest measured impulse response reported to date for these devices.

Citation Download Citation

Deborah L. Crawford, Y. G. Wey, John Edward Bowers, Michael J. Hafich, and Gary Y. Robinson "GaInAs PIN photodetectors on semi-insulating substrates", Proc. SPIE 1371, High-Frequency Analog Fiber Optic Systems, (1 February 1991); https://doi.org/10.1117/12.24896

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available