1 February 1991 GaInAs PIN photodetectors on semi-insulating substrates
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Proceedings Volume 1371, High-Frequency Analog Fiber Optic Systems; (1991) https://doi.org/10.1117/12.24896
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States
An InGaAs/InP PIN photodiode integrated with 50 ohms coplanar waveguides has been fabricated on a semi-insulating substrate for high-speed operation. This photodetector exhibits a system limited impulse response of 16 ps, which is considered to be the fastest measured impulse response reported to date for these devices.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deborah L. Crawford, Deborah L. Crawford, Y. G. Wey, Y. G. Wey, John Edward Bowers, John Edward Bowers, Michael J. Hafich, Michael J. Hafich, Gary Y. Robinson, Gary Y. Robinson, "GaInAs PIN photodetectors on semi-insulating substrates", Proc. SPIE 1371, High-Frequency Analog Fiber Optic Systems, (1 February 1991); doi: 10.1117/12.24896; https://doi.org/10.1117/12.24896

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