1 February 1991 Novel high-speed dual-wavelength InAlAs/InGaAs graded superlattice Schottky barrier photodiode for 0.8- and 1.3-μm detection
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Proceedings Volume 1371, High-Frequency Analog Fiber Optic Systems; (1991) https://doi.org/10.1117/12.24895
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States
Abstract
A new planar high-speed dual wavelength InAlAs/InGaAs Schottky barrier photodiode with graded superlattice structure is reported. In the detector structure, the top wide band gap n-In(0.52)Al(0.48)As epilayer absorbs photons in the visible to near infrared spectrum with the peak response occurring around 0.8 micron, and the bottom n-In(0.53)Ga(0.47)As epilayer absorbs photons in the 1.0 to 1.6 micron wavelength regime with the peak response occurring at 1.3 micron. The detector is capable of detecting and demultiplexing at both short and long wavelengths simultaneously without the complication of additional components. The response speed measured by the impulse response method is estimated to be about 3GHz.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiu Chul Hwang, Kiu Chul Hwang, Sheng S. Li, Sheng S. Li, Yung Chung Kao, Yung Chung Kao, } "Novel high-speed dual-wavelength InAlAs/InGaAs graded superlattice Schottky barrier photodiode for 0.8- and 1.3-μm detection", Proc. SPIE 1371, High-Frequency Analog Fiber Optic Systems, (1 February 1991); doi: 10.1117/12.24895; https://doi.org/10.1117/12.24895
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