1 February 1991 Radiation effects on GaAs optical system FET devices
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Proceedings Volume 1374, Integrated Optics and Optoelectronics II; (1991) https://doi.org/10.1117/12.24954
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States
Radiation effects on MESFETs and HFETs used in the fabrication of GaAs integrated circuits of the 1.7 Gb/s system and the 880 Mb/s Metrabus light wave systems are discussed. These devices are used in the driver and preamps of the light wave bus systems. Results on the traps formed from electron radiation as well as gamma radiation results are presented. There was negligible shift in the V sub th values. No new traps were detected. The new structure and fabrication technique are argued to be more radiation resistant than the previously tested ones. Results of annealing experiments performed using MESFETs after they were irradiated are presented.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alvin S. Kanofsky, Alvin S. Kanofsky, Magaly Spector, Magaly Spector, Ronald L. Remke, Ronald L. Remke, Steve B. Witmer, Steve B. Witmer, } "Radiation effects on GaAs optical system FET devices", Proc. SPIE 1374, Integrated Optics and Optoelectronics II, (1 February 1991); doi: 10.1117/12.24954; https://doi.org/10.1117/12.24954


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