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1 February 1991 Radiation effects on dynamical behavior of LiNbO3 switching devices
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Proceedings Volume 1374, Integrated Optics and Optoelectronics II; (1991) https://doi.org/10.1117/12.24955
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States
Abstract
The dynamical properties of LiNbO3 switches were measured as a function of radiation. The devices are titanium indiffused delta beta switches. Measurements of the gamma radiation level using radiation monitors indicate a total dose of less than 100 rad for a 5-min gamma exposure. The dc levels attenuate for the unswitched case, but not to the same degree that the switched signals do. With pulsed beam, a pulsed attenuation of the signal is evident.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alvin S. Kanofsky, William J. Minford, and James E. Watson "Radiation effects on dynamical behavior of LiNbO3 switching devices", Proc. SPIE 1374, Integrated Optics and Optoelectronics II, (1 February 1991); https://doi.org/10.1117/12.24955
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