Photoablative etching of materials for optoelectronic integrated devices

Patrick Lemoine; John D. Magan; Werner J. Blau

doi:10.1117/12.25023

1 March 1991 Photoablative etching of materials for optoelectronic integrated devices

Patrick Lemoine, John D. Magan, Werner J. Blau

Proceedings Volume 1377, Excimer Laser Materials Processing and Beam Delivery Systems; (1991) https://doi.org/10.1117/12.25023
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States

Abstract

Laser photoablation of a variety of polymer films was observed at UV wavelengths. The etch curves do not fit Beer's law and the Srinavasan model but follow the trend of a multiphotonic process. Ablation occurs with minimal degradation in the remaining material. Linear absorption characteristics and chemical composition are not the only factors which contribute to the etching mechanism. Process parameters also include mechanical properties, sample purity and microstructure.

Citation Download Citation

Patrick Lemoine, John D. Magan, and Werner J. Blau "Photoablative etching of materials for optoelectronic integrated devices", Proc. SPIE 1377, Excimer Laser Materials Processing and Beam Delivery Systems, (1 March 1991); https://doi.org/10.1117/12.25023

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